SIE882DF-T1-GE3
Vishay Siliconix
Product No:
SIE882DF-T1-GE3
Manufacturer:
Package:
10-PolarPAK® (L)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 25V 60A 10POLARPAK
Quantity:
Delivery:
Payment:
In Stock : 2760 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
2.2895
2.2895
10
2.0596
20.596
100
1.65547
165.547
500
1.360096
680.048
1000
1.126928
1126.928
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 10-PolarPAK® (L) |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Base Product Number | SIE882 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.4mOhm @ 20A, 10V |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) |
| Supplier Device Package | 10-PolarPAK® (L) |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 25 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6400 pF @ 12.5 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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