SIHB100N60E-GE3
Vishay Siliconix
Product No:
SIHB100N60E-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 600V 30A D2PAK
Quantity:
Delivery:
Payment:
In Stock : 303 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
4.636
4.636
10
3.8893
38.893
100
3.14678
314.678
500
2.797142
1398.571
1000
2.395045
2395.045
2000
2.255196
4510.392
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | E |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Base Product Number | SIHB100 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 13A, 10V |
| Power Dissipation (Max) | 208W (Tc) |
| Supplier Device Package | D²PAK (TO-263) |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1851 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
