SIHB11N80AE-GE3
Vishay Siliconix
Product No:
SIHB11N80AE-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 800V 8A D2PAK
Quantity:
Delivery:
Payment:
In Stock : 1003 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.995
1.995
10
1.65775
16.5775
100
1.319075
131.9075
500
1.116136
558.068
1000
0.947026
947.026
2000
0.899678
1799.356
5000
0.865849
4329.245
10000
0.837188
8371.88
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | E |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIHB11 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 450mOhm @ 5.5A, 10V |
| Power Dissipation (Max) | 78W (Tc) |
| Supplier Device Package | D²PAK (TO-263) |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 804 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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