SIHB12N65E-GE3
Vishay Siliconix
Product No:
SIHB12N65E-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 650V 12A D2PAK
Quantity:
Delivery:
Payment:
In Stock : 729 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
2.679
2.679
10
2.22585
22.2585
100
1.771655
177.1655
500
1.4991
749.55
1000
1.271974
1271.974
2000
1.208372
2416.744
5000
1.162942
5814.71
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIHB12 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V |
| Power Dissipation (Max) | 156W (Tc) |
| Supplier Device Package | D²PAK (TO-263) |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1224 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
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15,000 ㎡In-stock Warehouse
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