SIHB35N60E-GE3
Vishay Siliconix
Product No:
SIHB35N60E-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 650V 32A D2PAK
Quantity:
Delivery:
Payment:
In Stock : 225 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
5.852
5.852
10
4.91055
49.1055
100
3.97233
397.233
500
3.53096
1765.48
1000
3.023384
3023.384
2000
2.846836
5693.672
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIHB35 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 94mOhm @ 17A, 10V |
| Power Dissipation (Max) | 250W (Tc) |
| Supplier Device Package | D²PAK (TO-263) |
| Gate Charge (Qg) (Max) @ Vgs | 132 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2760 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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