SIHB5N80AE-GE3
Vishay Siliconix
Product No:
SIHB5N80AE-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Batch:
-
Datasheet:
-
Description:
E SERIES POWER MOSFET D2PAK (TO-
Quantity:
Delivery:
Payment:
In Stock : 840 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.4725
1.4725
10
1.20745
12.0745
100
0.93898
93.898
500
0.795891
397.9455
1000
0.648337
648.337
2000
0.610328
1220.656
5000
0.581267
2906.335
10000
0.554439
5544.39
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | E |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 1.5A, 10V |
| Power Dissipation (Max) | 62.5W (Tc) |
| Supplier Device Package | D²PAK (TO-263) |
| Gate Charge (Qg) (Max) @ Vgs | 16.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 321 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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