SIHD186N60EF-GE3
Vishay Siliconix
Product No:
SIHD186N60EF-GE3
Manufacturer:
Package:
TO-252AA
Batch:
-
Datasheet:
Description:
MOSFET N-CH 600V 19A DPAK
Quantity:
Delivery:
Payment:
In Stock : 4677 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
2.8215
2.8215
10
2.3674
23.674
100
1.91539
191.539
500
1.702533
851.2665
1000
1.457794
1457.794
2000
1.372674
2745.348
5000
1.316938
6584.69
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | EF |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Base Product Number | SIHD186 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 201mOhm @ 9.5A, 10V |
| Power Dissipation (Max) | 156W (Tc) |
| Supplier Device Package | TO-252AA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1118 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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