SIHD6N80AE-GE3
Vishay Siliconix
Product No:
SIHD6N80AE-GE3
Manufacturer:
Package:
TO-252AA
Batch:
-
Datasheet:
Description:
MOSFET N-CH 800V 5A DPAK
Quantity:
Delivery:
Payment:
In Stock : 2980 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.2065
1.2065
10
0.9899
9.899
100
0.76969
76.969
500
0.652422
326.211
1000
0.531468
531.468
2000
0.500318
1000.636
5000
0.476492
2382.46
10000
0.454499
4544.99
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | E |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIHD6 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 950mOhm @ 2A, 10V |
| Power Dissipation (Max) | 62.5W (Tc) |
| Supplier Device Package | TO-252AA |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 800 V |
| Input Capacitance (Ciss) (Max) @ Vds | 422 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
