SIHF640S-GE3
Vishay Siliconix
Product No:
SIHF640S-GE3
Manufacturer:
Package:
D²PAK (TO-263)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 200V 18A D2PAK
Quantity:
Delivery:
Payment:
In Stock : 1000 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.9
1.9
10
1.5751
15.751
100
1.25362
125.362
500
1.060732
530.366
1000
0.900011
900.011
2000
0.85501
1710.02
5000
0.822871
4114.355
10000
0.795625
7956.25
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIHF640 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 11A, 10V |
| Power Dissipation (Max) | 3.1W (Ta), 130W (Tc) |
| Supplier Device Package | D²PAK (TO-263) |
| Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
