SIS606BDN-T1-GE3
Vishay Siliconix
Product No:
SIS606BDN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8
Batch:
-
Datasheet:
Description:
MOSFET N-CH 100V 9.4A/35.3A PPAK
Quantity:
Delivery:
Payment:
In Stock : 3000 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.3585
1.3585
10
1.11435
11.1435
100
0.8664
86.64
500
0.734407
367.2035
1000
0.598253
598.253
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Base Product Number | SIS606 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 17.4mOhm @ 10A, 10V |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8 |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A (Ta), 35.3A (Tc) |
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
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