SISH617DN-T1-GE3
Vishay Siliconix
Product No:
SISH617DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8SH
Batch:
-
Datasheet:
Description:
MOSFET P-CH 30V 13.9A/35A PPAK
Quantity:
Delivery:
Payment:
In Stock : 11679 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.874
0.874
10
0.7581
7.581
100
0.52459
52.459
500
0.43833
219.165
1000
0.373056
373.056
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | P-Channel |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® 1212-8SH |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Base Product Number | SISH617 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 12.3mOhm @ 13.9A, 10V |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Supplier Device Package | PowerPAK® 1212-8SH |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 13.9A (Ta), 35A (Tc) |
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30,000,000Standard Product Unit
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15,000 ㎡In-stock Warehouse
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