SISH892BDN-T1-GE3
Vishay Siliconix
Product No:
SISH892BDN-T1-GE3
Manufacturer:
Package:
PowerPAK® SO-8DC
Batch:
-
Datasheet:
-
Description:
N-CHANNEL 100 V (D-S) MOSFET POW
Quantity:
Delivery:
Payment:
In Stock : 2561 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.8075
0.8075
10
0.7011
7.011
100
0.485355
48.5355
500
0.405517
202.7585
1000
0.345116
345.116
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | PowerPAK® SO-8 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 30.4mOhm @ 10A, 10V |
| Power Dissipation (Max) | 3.4W (Ta), 29W (Tc) |
| Supplier Device Package | PowerPAK® SO-8DC |
| Gate Charge (Qg) (Max) @ Vgs | 26.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1110 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Ta), 20A (Tc) |
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30,000,000Standard Product Unit
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