SISS10ADN-T1-GE3

Vishay Siliconix

Product No:

SISS10ADN-T1-GE3

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Package:

PowerPAK® 1212-8S

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Description:

MOSFET N-CH 40V 31.7A/109A PPAK

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Parameter Info

User Guide

Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	+20V, -16V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	PowerPAK® 1212-8S
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 250µA
Base Product Number	SISS10
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	2.65mOhm @ 15A, 10V
Power Dissipation (Max)	4.8W (Ta), 56.8W (Tc)
Supplier Device Package	PowerPAK® 1212-8S
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 10 V
Drain to Source Voltage (Vdss)	40 V
Input Capacitance (Ciss) (Max) @ Vds	3030 pF @ 20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	31.7A (Ta), 109A (Tc)