SIZF906BDT-T1-GE3
Vishay Siliconix
Product No:
SIZF906BDT-T1-GE3
Manufacturer:
Package:
8-PowerPair® (6x5)
Batch:
-
Datasheet:
Description:
DUAL N-CHANNEL 30 V (D-S) MOSFET
Quantity:
Delivery:
Payment:
In Stock : 29477 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.843
1.843
10
1.53425
15.3425
100
1.220845
122.0845
500
1.03303
516.515
1000
0.876508
876.508
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | TrenchFET® Gen IV |
| Package | Tape & Reel (TR) |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Power - Max | 4.5W (Ta), 38W (Tc), 5W (Ta), 83W (Tc) |
| Configuration | 2 N-Channel (Dual), Schottky |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Base Product Number | SIZF906 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.1mOhm @ 15A, 10V, 680µOhm @ 20A, 10V |
| Supplier Device Package | 8-PowerPair® (6x5) |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V, 165nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1630pF @ 15V, 5550pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 105A (Tc), 63A (Ta), 257A (Tc) |
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