SPB18P06PGATMA1

Infineon Technologies

Product No:

SPB18P06PGATMA1

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Package:

PG-TO263-3

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Description:

MOSFET P-CH 60V 18.7A D2PAK

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Parameter Info

User Guide

Mfr	Infineon Technologies
Series	SIPMOS®
Package	Tape & Reel (TR)
FET Type	P-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Base Product Number	SPB18P06
Operating Temperature	-55°C ~ 175°C (TJ)
Rds On (Max) @ Id, Vgs	130mOhm @ 13.2A, 10V
Power Dissipation (Max)	81.1W (Ta)
Supplier Device Package	PG-TO263-3
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	860 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	18.7A (Ta)