SQM120N10-3M8_GE3
Vishay Siliconix
Product No:
SQM120N10-3M8_GE3
Manufacturer:
Package:
TO-263 (D²Pak)
Batch:
-
Datasheet:
Description:
MOSFET N-CH 100V 120A TO263
Quantity:
Delivery:
Payment:
In Stock : 335 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
3.5055
3.5055
10
2.945
29.45
100
2.382315
238.2315
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Product Information
Parameter Info
User Guide
| Mfr | Vishay Siliconix |
| Series | Automotive, AEC-Q101, TrenchFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA |
| Base Product Number | SQM120 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
| Power Dissipation (Max) | 375W (Tc) |
| Supplier Device Package | TO-263 (D²Pak) |
| Gate Charge (Qg) (Max) @ Vgs | 190 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7230 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
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