TK100A06N1,S4X

Toshiba Semiconductor and Storage

Product No:

TK100A06N1,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 100A TO220SIS

Quantity:

Delivery:

Payment:

In Stock : 50

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.4985

    2.4985

  • 10

    2.2477

    22.477

  • 100

    1.806615

    180.6615

  • 500

    1.484356

    742.178

  • 1000

    1.229889

    1229.889

  • 2000

    1.145073

    2290.146

  • 5000

    1.102656

    5513.28

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Base Product Number TK100A06
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 2.7mOhm @ 50A, 10V
Power Dissipation (Max) 45W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 140 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 10500 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)