
Toshiba Semiconductor and Storage
Product No:
TK100A06N1,S4X
Manufacturer:
Package:
TO-220SIS
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 60V 100A TO220SIS
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
2.4985
2.4985
10
2.2477
22.477
100
1.806615
180.6615
500
1.484356
742.178
1000
1.229889
1229.889
2000
1.145073
2290.146
5000
1.102656
5513.28
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| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Base Product Number | TK100A06 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 50A, 10V |
| Power Dissipation (Max) | 45W (Tc) |
| Supplier Device Package | TO-220SIS |
| Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10500 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |