TK110A65Z,S4X

Toshiba Semiconductor and Storage

Product No:

TK110A65Z,S4X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 24A TO220SIS

Quantity:

Delivery:

Payment:

In Stock : 51

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    3.8665

    3.8665

  • 10

    3.2452

    32.452

  • 100

    2.62523

    262.523

  • 500

    2.333504

    1166.752

  • 1000

    1.998059

    1998.059

  • 2000

    1.88139

    3762.78

  • 5000

    1.805

    9025

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series DTMOSVI
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1.02mA
Base Product Number TK110A65
Operating Temperature 150°C
Rds On (Max) @ Id, Vgs 110mOhm @ 12A, 10V
Power Dissipation (Max) 45W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 2250 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 24A (Ta)