TK110E10PL,S1X

Toshiba Semiconductor and Storage

Product No:

TK110E10PL,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

X35 PB-F POWER MOSFET TRANSISTOR

Quantity:

Delivery:

Payment:

In Stock : 48

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.2255

    1.2255

  • 10

    1.0051

    10.051

  • 100

    0.781755

    78.1755

  • 500

    0.662663

    331.3315

  • 1000

    0.539818

    539.818

  • 2000

    0.508174

    1016.348

  • 5000

    0.483968

    2419.84

  • 10000

    0.461634

    4616.34

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series -
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 300µA
Base Product Number TK110E10
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 10.7mOhm @ 21A, 10V
Power Dissipation (Max) 87W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)