TK11A65W,S5X

Toshiba Semiconductor and Storage

Product No:

TK11A65W,S5X

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 11.1A TO220SIS

Quantity:

Delivery:

Payment:

In Stock : 93

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.3965

    1.3965

  • 10

    1.25115

    12.5115

  • 100

    0.97546

    97.546

  • 500

    0.80579

    402.895

  • 1000

    0.636148

    636.148

  • 2000

    0.59374

    1187.48

  • 5000

    0.564053

    2820.265

  • 10000

    0.542849

    5428.49

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 450µA
Base Product Number TK11A65
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 390mOhm @ 5.5A, 10V
Power Dissipation (Max) 35W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11.1A (Ta)