TK12E60W,S1VX
Toshiba Semiconductor and Storage
Product No:
TK12E60W,S1VX
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
MOSFET N CH 600V 11.5A TO-220
Quantity:
Delivery:
Payment:
In Stock : 50 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
3.078
3.078
10
2.76355
27.6355
100
2.263945
226.3945
500
1.927246
963.623
1000
1.625393
1625.393
2000
1.54413
3088.26
5000
1.486076
7430.38
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.7V @ 600µA |
| Base Product Number | TK12E60 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.8A, 10V |
| Power Dissipation (Max) | 110W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
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