TK12Q60W,S1VQ

Toshiba Semiconductor and Storage

Product No:

TK12Q60W,S1VQ

Package:

I-Pak

Batch:

-

Datasheet:

-

Description:

MOSFET N CH 600V 11.5A IPAK

Quantity:

Delivery:

Payment:

In Stock : 65

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    1.8715

    1.8715

  • 10

    1.55135

    15.5135

  • 100

    1.234905

    123.4905

  • 500

    1.044886

    522.443

  • 1000

    0.886578

    886.578

  • 2000

    0.842251

    1684.502

  • 5000

    0.810588

    4052.94

  • 10000

    0.78375

    7837.5

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-251-3 Stub Leads, IPak
Product Status Active
Vgs(th) (Max) @ Id 3.7V @ 600µA
Base Product Number TK12Q60
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 340mOhm @ 5.8A, 10V
Power Dissipation (Max) 100W (Tc)
Supplier Device Package I-Pak
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 11.5A (Ta)