TK190E65Z,S1X

Toshiba Semiconductor and Storage

Product No:

TK190E65Z,S1X

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Package:

TO-220

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Description:

650V DTMOS VI TO-220 190MOHM

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Parameter Info

User Guide

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 610µA
Operating Temperature	150°C
Rds On (Max) @ Id, Vgs	190mOhm @ 7.5A, 10V
Power Dissipation (Max)	130W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	15A (Ta)