TK2R4E08QM,S1X

Toshiba Semiconductor and Storage

Product No:

TK2R4E08QM,S1X

Package:

TO-220

Batch:

-

Datasheet:

-

Description:

UMOS10 TO-220AB 80V 2.4MOHM

Quantity:

Delivery:

Payment:

In Stock : 186

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.907

    2.907

  • 10

    2.44245

    24.4245

  • 100

    1.97581

    197.581

  • 500

    1.756265

    878.1325

  • 1000

    1.503802

    1503.802

  • 2000

    1.415994

    2831.988

  • 5000

    1.3585

    6792.5

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series U-MOSX-H
Package Tube
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 2.2mA
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 2.44mOhm @ 50A, 10V
Power Dissipation (Max) 300W (Tc)
Supplier Device Package TO-220
Gate Charge (Qg) (Max) @ Vgs 178 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 13000 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)