
Toshiba Semiconductor and Storage
Product No:
TK2R4E08QM,S1X
Manufacturer:
Package:
TO-220
Batch:
-
Datasheet:
-
Description:
UMOS10 TO-220AB 80V 2.4MOHM
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
2.907
2.907
10
2.44245
24.4245
100
1.97581
197.581
500
1.756265
878.1325
1000
1.503802
1503.802
2000
1.415994
2831.988
5000
1.3585
6792.5
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| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSX-H |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 2.2mA |
| Operating Temperature | 175°C |
| Rds On (Max) @ Id, Vgs | 2.44mOhm @ 50A, 10V |
| Power Dissipation (Max) | 300W (Tc) |
| Supplier Device Package | TO-220 |
| Gate Charge (Qg) (Max) @ Vgs | 178 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |