TK2R9E10PL,S1X

Toshiba Semiconductor and Storage

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TK2R9E10PL,S1X

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TO-220

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Description:

PB-F POWER MOSFET TRANSISTOR TO-

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Parameter Info

User Guide

Mfr	Toshiba Semiconductor and Storage
Series	U-MOSIX-H
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Operating Temperature	175°C
Rds On (Max) @ Id, Vgs	2.9mOhm @ 50A, 10V
Power Dissipation (Max)	306W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	161 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	9500 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	100A (Ta)