TK30A06N1,S4X
Toshiba Semiconductor and Storage
Product No:
TK30A06N1,S4X
Manufacturer:
Package:
TO-220SIS
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 60V 30A TO220SIS
Quantity:
Delivery:
Payment:
In Stock : 237 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.8455
0.8455
10
0.741
7.41
100
0.568005
56.8005
500
0.449046
224.523
1000
0.359233
359.233
2000
0.325565
651.13
5000
0.303107
1515.535
10000
0.291878
2918.78
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Base Product Number | TK30A06 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 15A, 10V |
| Power Dissipation (Max) | 25W (Tc) |
| Supplier Device Package | TO-220SIS |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1050 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
