TK33S10N1Z,LQ

Toshiba Semiconductor and Storage

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TK33S10N1Z,LQ

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DPAK+

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Description:

MOSFET N-CH 100V 33A DPAK

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Parameter Info

User Guide

Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 500µA
Base Product Number	TK33S10
Operating Temperature	175°C (TJ)
Rds On (Max) @ Id, Vgs	9.7mOhm @ 16.5A, 10V
Power Dissipation (Max)	125W (Tc)
Supplier Device Package	DPAK+
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 10 V
Drain to Source Voltage (Vdss)	100 V
Input Capacitance (Ciss) (Max) @ Vds	2050 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	33A (Ta)