TK5Q65W,S1Q
Toshiba Semiconductor and Storage
Product No:
TK5Q65W,S1Q
Manufacturer:
Package:
I-Pak
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 5.2A IPAK
Quantity:
Delivery:
Payment:
In Stock : 55 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
1.1495
1.1495
10
1.0279
10.279
100
0.80104
80.104
500
0.66177
330.885
1000
0.522443
522.443
2000
0.487616
975.232
5000
0.463239
2316.195
10000
0.445826
4458.26
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | DTMOSIV |
| Package | Tube |
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 170µA |
| Base Product Number | TK5Q65 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 1.22Ohm @ 2.6A, 10V |
| Power Dissipation (Max) | 60W (Tc) |
| Supplier Device Package | I-Pak |
| Gate Charge (Qg) (Max) @ Vgs | 10.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 300 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
Recommended Parts
2000+Daily average RFQ Volume
30,000,000Standard Product Unit
2800+Worldwide Manufacturers
15,000 ㎡In-stock Warehouse
Quick Links
