TK8Q65W,S1Q

Toshiba Semiconductor and Storage

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TK8Q65W,S1Q

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I-Pak

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Description:

MOSFET N-CH 650V 7.8A IPAK

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Parameter Info

User Guide

Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-251-3 Stub Leads, IPak
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 300µA
Base Product Number	TK8Q65
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	670mOhm @ 3.9A, 10V
Power Dissipation (Max)	80W (Tc)
Supplier Device Package	I-Pak
Gate Charge (Qg) (Max) @ Vgs	16 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	570 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	7.8A (Ta)