TPN13008NH,L1Q
Toshiba Semiconductor and Storage
Product No:
TPN13008NH,L1Q
Manufacturer:
Package:
8-TSON Advance (3.1x3.1)
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 80V 18A 8TSON
Quantity:
Delivery:
Payment:
In Stock : 546 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
0.969
0.969
10
0.86355
8.6355
100
0.673075
67.3075
500
0.556035
278.0175
1000
0.438976
438.976
2000
0.409706
819.412
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Product Information
Parameter Info
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Series | U-MOSVIII-H |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | - |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerVDFN |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Base Product Number | TPN13008 |
| Operating Temperature | 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 13.3mOhm @ 9A, 10V |
| Power Dissipation (Max) | 700mW (Ta), 42W (Tc) |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
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