TPN7R006PL,L1Q

Toshiba Semiconductor and Storage

Product No:

TPN7R006PL,L1Q

Package:

8-TSON Advance (3.1x3.1)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 60V 54A 8TSON

Quantity:

Delivery:

Payment:

In Stock : 705

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    0.817

    0.817

  • 10

    0.6707

    6.707

  • 100

    0.521835

    52.1835

  • 500

    0.442358

    221.179

  • 1000

    0.360344

    360.344

  • 2000

    0.339216

    678.432

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series U-MOSIX-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 200µA
Base Product Number TPN7R006
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 7mOhm @ 27A, 10V
Power Dissipation (Max) 630mW (Ta), 75W (Tc)
Supplier Device Package 8-TSON Advance (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Drain to Source Voltage (Vdss) 60 V
Input Capacitance (Ciss) (Max) @ Vds 1875 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 54A (Tc)