TPW1R104PB,L1XHQ

Toshiba Semiconductor and Storage

Product No:

TPW1R104PB,L1XHQ

Package:

8-DSOP Advance

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 40V 120A 8DSOP

Quantity:

Delivery:

Payment:

In Stock : 9973

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    2.071

    2.071

  • 10

    1.7157

    17.157

  • 100

    1.365815

    136.5815

  • 500

    1.155713

    577.8565

  • 1000

    0.980609

    980.609

  • 2000

    0.93158

    1863.16

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Product Information

Parameter Info
User Guide
Mfr Toshiba Semiconductor and Storage
Series U-MOSIX-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 3V @ 500µA
Base Product Number TPW1R104
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 1.14mOhm @ 60A, 10V
Power Dissipation (Max) 960mW (Ta), 132W (Tc)
Supplier Device Package 8-DSOP Advance
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 4560 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 120A (Ta)