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VS-3C12ET07T-M3

Vishay General Semiconductor - Diodes Division

Product No:

VS-3C12ET07T-M3

Package:

TO-220AC

Batch:

-

Datasheet:

Description:

650 V POWER SIC GEN 3 MERGED PIN

Quantity:

Delivery:

Payment:

In Stock : 3050

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    5.377

    5.377

  • 10

    4.5106

    45.106

  • 100

    3.64933

    364.933

  • 500

    3.24387

    1621.935

  • 1000

    2.777572

    2777.572

  • 2000

    2.615378

    5230.756

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Product Information

Parameter Info
User Guide
Mfr Vishay General Semiconductor - Diodes Division
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Base Product Number VS-3C12
Capacitance @ Vr, F 535pF @ 1V, 1MHz
Supplier Device Package TO-220AC
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 65 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 12A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 12 A