WNSC12650T6J
WeEn Semiconductors
Product No:
WNSC12650T6J
Manufacturer:
Package:
5-DFN (8x8)
Batch:
-
Datasheet:
Description:
DIODE SIL CARBIDE 650V 12A 5DFN
Quantity:
Delivery:
Payment:
In Stock : 2998 
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
3.2965
3.2965
10
2.77115
27.7115
100
2.24181
224.181
500
1.992682
996.341
1000
1.706238
1706.238
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Product Information
Parameter Info
User Guide
| Mfr | WeEn Semiconductors |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tape & Reel (TR) |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Surface Mount |
| Package / Case | 4-VSFN Exposed Pad |
| Product Status | Obsolete |
| Base Product Number | WNSC1 |
| Capacitance @ Vr, F | 328pF @ 1V, 1MHz |
| Supplier Device Package | 5-DFN (8x8) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Operating Temperature - Junction | 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 12 A |
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