GT30N135SRA,S1E

Toshiba Semiconductor and Storage

Product No:

GT30N135SRA,S1E

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Package:

TO-247

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Description:

D-IGBT TO-247 VCES=1350V IC=30A

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Parameter Info

User Guide

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tube
IGBT Type	-
Input Type	Standard
Gate Charge	270 nC
Power - Max	348 W
Mounting Type	Through Hole
Package / Case	TO-247-3
Product Status	Active
Test Condition	300V, 60A, 39Ohm, 15V
Switching Energy	-, 1.3mJ (off)
Td (on/off) @ 25°C	-
Operating Temperature	175°C (TJ)
Supplier Device Package	TO-247
Vce(on) (Max) @ Vge, Ic	2.6V @ 15V, 60A
Current - Collector (Ic) (Max)	60 A
Current - Collector Pulsed (Icm)	120 A
Voltage - Collector Emitter Breakdown (Max)	1350 V