GT40WR21,Q

Toshiba Semiconductor and Storage

Product No:

GT40WR21,Q

Manufacturer:

Package:

TO-3P(N)

Batch:

Datasheet:

Description:

DISCRETE IGBT TRANSISTOR TO-3PN(

Quantity:

Delivery:

Payment:

In Stock : 100

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Parameter Info

User Guide

Mfr	Toshiba Semiconductor and Storage
Series	-
Package	Tray
IGBT Type	-
Input Type	Standard
Power - Max	375 W
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Product Status	Active
Test Condition	-
Switching Energy	-
Td (on/off) @ 25°C	-
Operating Temperature	175°C (TJ)
Supplier Device Package	TO-3P(N)
Vce(on) (Max) @ Vge, Ic	5.9V @ 15V, 40A
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	80 A
Voltage - Collector Emitter Breakdown (Max)	1350 V